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TK7A50D 2SB624 120EC C574P OPR5011 D2249 BYD17K A3122LLT
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 SKM 600GB126D ...
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMITRANS(R) 3 Trench IGBT Module
SKM 600GB126D SKM 600GAL126D Preliminary Data Freewheeling Diode Inverse Diode
Features
Module
Typical Applications
Characteristics Symbol Conditions IGBT min. typ. max. Units
Remarks
GB
GAL
1
11-09-2006 SEN
(c) by SEMIKRON
SKM 600GB126D ...
Characteristics Symbol Conditions Inverse diode min. typ. max. Units
SEMITRANS(R) 3 Trench IGBT Module
Freewheeling Diode SKM 600GB126D SKM 600GAL126D Preliminary Data
Features
Module
Typical Applications
Remarks
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
GB
GAL
2
11-09-2006 SEN
(c) by SEMIKRON
SKM 600GB126D ...
Zth Symbol Zth(j-c)l Conditions Values Units
SEMITRANS(R) 3
Zth(j-c)D
Trench IGBT Module
SKM 600GB126D SKM 600GAL126D Preliminary Data
Features
Typical Applications
Remarks
GB
GAL
3
11-09-2006 SEN
(c) by SEMIKRON
SKM 600GB126D ...
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
11-09-2006 SEN
(c) by SEMIKRON
SKM 600GB126D ...
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
11-09-2006 SEN
(c) by SEMIKRON
SKM 600GB126D ...
UL Recognized File no. E 63 532
6
11-09-2006 SEN
(c) by SEMIKRON


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